preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM600E2Y-34H high power switching use insulated type i c ................................................................... 600a v ces ....................................................... 1700v insulated type 1-elements in a pack (for brake) application dc choppers, dynamic braking choppers. CM600E2Y-34H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm hvigbt (high voltage insulated gate bipolar transistor) modules e2 c2 e1 g1 c1 e1 c1 cm g1 c2 e2 e1 c1 3 - m4 nuts 4 - m8 nuts c1 e1 g2 e2 c2 114 31.5 53 40 28 14 20 30 130 16 5 38 11.85 55.2 11.5 35 5 6 - 7 mounting holes 57 0.25 57 0.25 124 0.25 140 label circuit diagram
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM600E2Y-34H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value 1700 20 600 1200 600 1200 6200 ?0 ~ +150 ?0 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 v v a a a a w c c v n m n m n m kg collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 850v, i c = 600a, v ge = 15v v cc = 850v, i c = 600a v ge1 = v ge2 = 15v r g = 3.3 ? resistive load switching operation i e = 600a, v ge = 0v i e = 600a die / dt = ?200a / s junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied (per 1/2 module) i f = 600a, clamp diode part i f = 600a di f / dt = ?200a / s, clamp diode part junction to case, clamp diode part case to fin, conductive grease applied (per 1/2 module) i c = 60ma, v ce = 10v i c = 600a, v ge = 15v (note 4) v ce = 10v v ge = 0v 12 0.5 3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.020 0.064 3.25 2.00 0.064 ma a nf nf nf c s s s s v s c k/w k/w k/w v s c k/w k/w 2.75 3.30 70 10.0 3.8 3.3 2.40 100 0.016 2.50 100 0.016 5.5 4.5 6.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance forward voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) v fm t rr q rr r th(j-c) r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit thermal resistance hvigbt (high voltage insulated gate bipolar transistor) modules v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise.
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM600E2Y-34H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector current i c ( a ) collector-emitter saturation voltage v ce(sat) ( v ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 800 1000 1200 400 200 0 10 0 2 468 600 800 1000 1200 400 200 0 600 20 0481216 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage characteristics ( typical ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) 05 4 3 2 1 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 free-wheel diode forward characteristics ( typical ) t j = 25 c t j = 25 c v ge = 13v v ge = 11v v ge = 12v v ge = 10v v ge = 9v v ge = 8v v ge = 7v v ge = 14v v ge = 15v v ge = 20v i c = 1200a i c = 600a i c = 240a v ce = 10v t j = 25 c t j = 125 c t j = 25 c 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz 0 5 4 3 1 2 0 200 400 600 800 1000 1200 v ge = 15v t j = 25 c t j = 125 c
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM600E2Y-34H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 850v, v ge = 15v r g = 3.3 ? , t j = 125 c inductive load t d(on) t r t f half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 850v, t j = 25 c inductive load v ge = 15v, r g = 3.3 ? t rr i rr reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.032k/ w (per 1/2 module) transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 850v i c = 600a single pulse t c = 25 c r th(j c) = 0.080k/ w (per 1/2 module)
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